Dynamic Characteristics of a Thin Film Optoelectronic Voltage-Current Convertor
نویسندگان
چکیده
منابع مشابه
High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics
Articles you may be interested in Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices Appl. Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors Appl. Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics Appl. High-performance organic thi...
متن کاملLow-frequency characteristics of thin-film multijunction thermal voltage converters
Low-frequency errors of thin-film multijunction thermal voltage converters are estimated using a simple model based on easily measured parameters. The model predictions are verified by measuring the converter’s frequency characteristic using a digitally synthesized source.
متن کاملPower voltage current convertor using quasi complementary MOSFET current mirrors.
A voltage current convertor is described having a quasi complementary class AB architecture that is particularly suited to implementation using discrete power MOSFETs. High-voltage mirror designs are presented, enabling the construction of sources with kilovolt compliance range, tens of watts of output power and greater than 100 kHz bandwidth. GΩ output impedance and distortion below 1% can be ...
متن کاملNumerical and experimental dynamic characteristics of thin-film membranes
Presented is a total-Lagrangian displacement-based non-linear finite-element model of thin-film membranes for static and dynamic large-displacement analyses. The membrane theory fully accounts for geometric non-linearities. Fully non-linear static analysis followed by linear modal analysis is performed for an inflated circular cylindrical Kapton membrane tube under different pressures, and for ...
متن کاملDynamic leakage current compensation in ferroelectric thin-film capacitor structures
We report on a measurement procedure to separate ferroelectric switching current and dielectric displacement current from the leakage current in leaky ferroelectric thin-film capacitor structures. The ac current response is determined for two adjacent frequencies. Taking advantage of the different frequency dependencies of the ferroelectric switching current, dielectric displacement current and...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Active and Passive Electronic Components
سال: 1993
ISSN: 0882-7516,1563-5031
DOI: 10.1155/1993/79097